Crystal Growth of InP on a Gd_3Ga_5O_<12> Substrate by Organometallic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-01-20
著者
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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MIZUMOTO Tetsuya
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SHINGAI Yasushi
Department of Physical Electronics, Tokyo Institute of Technology
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NAITO Yoshiyuki
Department of Anesthesia, Kobe City General Hospital
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Naito Yoshiyuki
Department Of Anesthesia Kobe City General Hospital
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Naito Yoshiyuki
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Mizumoto Tetsuya
Department Of Eee Tokyo Institute Of Technology
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Mizumoto Tetsuya
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Shingai Yasushi
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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