Elimination of Back-Reflected Transverse Electric Mode in Transverse-Magnetic-Mode Optical Isolator with Si Guiding Layer
スポンサーリンク
概要
- 論文の詳細を見る
The elimination of a back-reflected transverse electric (TE) mode traveling in a transverse-magnetic (TM)-mode optical isolator with a Si guiding layer was investigated. The optical isolator had an optical interferometer that included a polarization-dependent reciprocal phase shifter in one of the arms. By adjusting the length of the reciprocal phase shifter, the interferometer prevented the back-reflected TE mode from coupling into an input port of the isolator. An extinction ratio of more than 32.0 dB was obtained against the back-reflected TE mode at a wavelength of 1.57 μm.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-10-15
著者
-
Yokoi Hideki
Department of Biochemistry, College of Agriculture, Kyoto Prefectural University
-
Shoji Yuya
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Mizumoto Tetsuya
Department Of Eee Tokyo Institute Of Technology
-
Mizumoto Tetsuya
Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, Tokyo 152-8552, Japan
-
Kuroda Tadayasu
Department of Electronic Engineering, Shibaura Institute of Technology, Tokyo 135-8548, Japan
-
Shoji Yuya
Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, Tokyo 152-8552, Japan
関連論文
- Semiconductor MMI Optical Isolator with Cladding of Ce:YIG
- Molecular Cloning and Characterization of a cDNA for Plastidic Copper/Zinc-Superoxide Dismutase in Rice (Oryza sativa L.)
- Roles of connective tissue growth factor and prostanoids in early streptozotocin-induced diabetic rat kidney: the effect of aspirin treatment
- Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
- Crystal Growth of InP on a Gd_3Ga_5O_ Substrate by Organometallic Chemical Vapor Deposition
- Balloon Catheter Test in Patients with Atrial Septal Defect and Patent Ductus Arteriosus
- Surveillance and Follow-up of Patients with Implanted Cardiac Pacemaker by Telephone Transmission
- Proposed Configuration of Optical Isolator with TiO2/Magnetic Garnet Waveguide
- Improved Heat Treatment for Wafer Direct Bonding between Semiconductors and Magnetic Garnets
- Direct Bonding between InP Substrate and Magnetooptic Waveguides
- Optical Propagation Loss Increase of (GdBi)_3Fe_5O_ Films Caused by Sputter Etching
- Loss Increase of (LuNdBi)_3(FeAl)_50_12 Films Caused by Sputter Etching
- Investigation of Nonreciprocal Characteristics and Design of Interferometric Optical Isolator with Multimode Interference Coupler Operating with a Unidirectional Magnetic Field
- Design of Optical Isolator with Sputter-Deposited Si Layer Employing Nonreciprocal Radiation-Mode Conversion
- Nonlinear Optical Properties in GaInAsP/InP Waveguides below the Band-gap Wavelength
- GaInAsP/InP Directional Coupler Loaded with Grating for Optically-Controlled Switching(Special Issue on Recent Progress of Integrated Photonic Devices)
- Selective-Area Growth of Magnetic Garnet Crystals by Liquid-Phase Epitaxy and Its Application to Waveguide Devices
- Effects of Hypertonic Mannitol on Renal Function in Open Heart Surgery
- Pulmonary Shunting during Venovenous Bypass
- Pulsatile Venous Flow in Extracorporeal Circulation
- Analysis of GaInAsP Surfaces by Contact-Angle Measurement for Wafer Direct Bonding with Garnet Crystals
- Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator
- GaInAsP/InP single-trench type TE-TM mode converter
- GaInAsP/InP single-trench type TE-TM mode converter (フォトニックネットワーク)
- GaInAsP/InP single-trench type TE-TM mode converter (光エレクトロニクス)
- GaInAsP/InP single-trench type TE-TM mode converter (レーザ・量子エレクトロニクス)
- Magnetooptic Waveguide with SiO_2 Cladding Layer Integrated on InP Substrate by Wafer Direct Bonding
- Surface Micromachining in Optical Isolator with Semiconductor Guiding Layer for Enhancement of Magnetooptic Effect
- Effects of Experimental Chronic Volume Overloading on Left Ventricular Contractility and Compliance
- Sputter-Deposited Si Layer for Optical Isolator with Si Guiding Layer
- Coupling Characteristics of Three-Guide Tapered Coupler for Optical Isolator with Si Guiding Layer
- Elimination of Back-Reflected Transverse Electric Mode in Transverse-Magnetic-Mode Optical Isolator with Si Guiding Layer
- Relaxation of Thermal Stress in Direct Bonding by Partitioning the Bonding Area for Fabrication of Optical Isolator with Semiconductor Guiding Layer
- Demonstration of Interferometric Waveguide Optical Isolator with a Unidirectional Magnetic Field
- Enhancement of Magneto Optic Effect in Optical Isolator with GaInAsP Guiding Layer by Selective Oxidation of AlInAs
- Calculation of Nonreciprocal Phase Shift in Magnetooptic Waveguide with Si Guiding Layer
- Silicon Mach–Zehnder interferometer optical isolator having 8 nm bandwidth for over 20 dB isolation