Relaxation of Thermal Stress in Direct Bonding by Partitioning the Bonding Area for Fabrication of Optical Isolator with Semiconductor Guiding Layer
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概要
- 論文の詳細を見る
The improvement of a direct bonding technique is important in realizing a waveguide optical isolator with a III–V compound semiconductor guiding layer. By applying a surface-activated bonding technique, a magneto-optic garnet, CeY2Fe5O12, was successfully bonded on GaInAsP at an elevated temperature of 450 °C with a large bonding area. However, a marked increase in propagation loss was observed in the waveguide after the bonding process owing to cracks formed by the difference in thermal expansion between garnets and compound semiconductors. To solve this problem, we demonstrate the effectiveness of partitioning the bonding area for reducing the thermal stress.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-11-25
著者
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Sakurai Kazumasa
Department Of Electrical And Electronic Engineering Graduete School Of Science And Engineering Tokyo
-
Mizumoto Tetsuya
Department Of Eee Tokyo Institute Of Technology
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Abe Kenji
Department Of Biochemistry 1 Hamamatsu University School Of Medicine
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Sakurai Kazumasa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
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Mizumoto Tetsuya
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
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Abe Kenji
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
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