GaInAsP/InP single-trench type TE-TM mode converter (光エレクトロニクス)
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概要
- 論文の詳細を見る
A TE-TM mode converter is proposed in a single trench GaInAsP/InP waveguide configuration fabricated by a single masking and etching process. Use of single-trench structure makes the design and the fabrication much simpler. The design of single-trench mode converter is described together with its fabrication in this article. 50% TE-TM mode conversion was obtained at a wavelength of 1.55μm in a fabricated device.
- 社団法人電子情報通信学会の論文
- 2009-01-22
著者
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Kim Sang-hun
Department Of Eee Tokyo Institute Of Technology
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Mizumoto Tetsuya
Department Of Eee Tokyo Institute Of Technology
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TAKEI Ryohei
Department of EEE, Tokyo Institute of Technology
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Takei Ryohei
Department Of Eee Tokyo Institute Of Technology
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- GaInAsP/InP single-trench type TE-TM mode converter
- GaInAsP/InP single-trench type TE-TM mode converter (フォトニックネットワーク)
- GaInAsP/InP single-trench type TE-TM mode converter (光エレクトロニクス)
- GaInAsP/InP single-trench type TE-TM mode converter (レーザ・量子エレクトロニクス)
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