Magnetooptic Waveguide with SiO_2 Cladding Layer Integrated on InP Substrate by Wafer Direct Bonding
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概要
- 論文の詳細を見る
Magnetooptic waveguides with a SiO_2 cladding layer were fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO_2 on a Gd_3Ga_5O_<12> substrate was investigated. Bonding was achieved by surface treatment of both wafers and subsequent heat treatment in H_2 ambient. By applying heat treatment in H_2 ambient at temperatures ranging between 110 and 220℃, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.
- 社団法人応用物理学会の論文
- 1997-12-15
著者
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Yokoi Hideki
Department of Biochemistry, College of Agriculture, Kyoto Prefectural University
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Yokoi Hideki
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Mizumoto Tetsuya
Department Of Eee Tokyo Institute Of Technology
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