Observation of InP Surfaces after (NH_4)_2S_x Treatment by a Scanning Tunneling Microscope
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概要
- 論文の詳細を見る
InP surfaces after (NH_4)_2S_x treatment were observed by a scanning tunneling microscope (STM) in air. The stabilized image of the flat surface was observed on the sample after (NH_4)_2S_x treatment for 30 s. The rms roughness was measured as 0.08 nm. When no surface treatment was applied, the surface was very rough when observed in the constant current mode. Since the STM image of the same sample with Au/Pd coating showed a flat surface and the current-voltage characteristics at the convex and concave portions were different, fluctuation of electron states on the InP surface is concluded to be the cause of the observed roughness. This result shows that a stable InP surface can be obtained by (NH_4)_2S_x treatment.
- 社団法人応用物理学会の論文
- 1993-03-15
著者
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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KURIHARA Kazuhiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Kurihara Kazuhiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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