Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes : Theoretical Fitting Over Four Orders of Magnitude
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Nagase M
Ntt Basic Research Laboratories Ntt Corporation
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Furuya Keiichi
Department Of Industiral Chemistry Faculty Of Engineering The University Of Tokyo
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町田 信也
東京工業大学大学院理工学研究科:科学技術振興機構crest
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MACHIDA Nobuya
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Nagase Masanori
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Machida N
Konan Univ. Kobe
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Machida Nobuya
Department Of Chemistry Konan University
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Furuya K
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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