MACHIDA Nobuya | Department of Physical Electronics, Tokyo Institute of Technology
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概要
関連著者
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MACHIDA Nobuya
Department of Physical Electronics, Tokyo Institute of Technology
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Machida Nobuya
Department Of Chemistry Konan University
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町田 信也
東京工業大学大学院理工学研究科:科学技術振興機構crest
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Machida N
Konan Univ. Kobe
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Furuya Keiichi
Department Of Industiral Chemistry Faculty Of Engineering The University Of Tokyo
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Nagase Masanori
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Furuya K
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Nagase M
Ntt Basic Research Laboratories Ntt Corporation
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SHIGEMATSU Toshihiko
Department of Chemistry, Faculty of Science, Konan University
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Shigematsu Toshihiko
Department Of Chemistry Faculty Of Science Konan University
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古屋 一仁
東京工業大学院理工学研究科
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SAKAI Hiroshi
Department of Applied Mathematics and Physics, Graduate School of Informatics, Kyoto University
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Wernersson L‐e
Solid State Physics/nanometer Structure Consortium Lund University
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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Shigematsu T
Konan Univ. Kobe
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Sakai H
Department Of Chemistry Faculty Of Science Konan University
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Sakai Hiroshi
Department Of Agricultural Chemistry The University Of Tokyo
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Tanaka Hiroyuki
Department Of Cardiology Kurashiki Central Hospital
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宮本 恭幸
東京工業大学
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Maeda Hiroshi
Department of Urology, Shinko Clinic
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Minami Tsutomu
Department Of Applied Chemistry University Of Osaka Prefecture
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Minami Tsutomu
Department Of Applied Chemistry College Of Engineering University Of Osaka Prefecture
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ISHIDA Masashi
Department of Orthopaedics, Graduate School of Medical Science, Kyoto Prefectural University of Medi
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YAMAMOTO Ren
Department of Physical Electronics, Tokyo Institute of Technology
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TAKEUCHI Katsuhiko
Department of Physical Electronics, Tokyo Institute of Technology
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WERNERSSON Lars-Erik
Solid State Physics/Nanometer Structure Consortium, Lund University
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SAMUELSON Lars
Department of Solid State Physics, University of Lund
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HANSSON Bjorn
Nanometer Structure Consortium, Lund University
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WERNERSSON Lars-Erik
Nanometer Structure Consortium, Lund University
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NAKANISHI Norihiko
Department of Chemistry, Faculty of Science, Konan University
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Nakagawa Ryo
Department of Biotechnology, Graduate School of Engineering, Nagoya University
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Hansson Bjorn
Nanometer Structure Consortium Lund University
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KASHIMA Issei
Department of Physical Electronics, Tokyo Institute of Technology
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NAGATSUKA Hiroyuki
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of T
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Kashima Issei
Department Of Physical Electronics Tokyo Institute Of Technology
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Nagatsuka Hiroyuki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Samuelson L
Lund Univ. Lund Swe
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Nakagawa Ryo
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakagawa Ryo
Department Of Biotechnology Graduate School Of Engineering Nagoya University
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Ishida Masashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Ishida Masashi
Department Of Chemistry Nagoya University
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Samuelson Lars
ルンド大学固体物理学科
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Nakanishi N
Faculty Of Science Konan University
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Nakanishi Norihiko
Department Of Chemistry Faculty Of Science Konan University
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Minami Tsutomu
Department Of Applied Materials Science Osaka Prefecture University
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Shigematsu T
Faculty Of Science Konan University
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FURUTA Kazuhito
Department of Physical Electronics, Graduate School of Science and Engineering,Tokyo Institute of Te
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KURAHASHI Masaki
Department of Physical Electronics, Graduate School of Science and Engineering,Tokyo Institute of Te
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Machida Nobuya
Department Of Physical Electronics Tokyo Institute Of Technology:crest Japan Science And Technology
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Machida Nobuya
Department Of Solid State Physics
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Kurahashi Masaki
National Institute For Materials Science
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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UKITA Ryoko
Department of Chemistry, Faculty of Science, Konan University
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KUBO Tomikatsu
Department of Chemistry, Faculty of Science, Konan University
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Kubo Tomikatsu
Department Of Chemistry Faculty Of Science Konan University
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Machida Nobuya
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Ukita Ryoko
Department Of Chemistry Faculty Of Science Konan University
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Furuta Kazuhito
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Tanaka Hiroyuki
Department Of Anesthesia And Clinical Research Institute National Hospital Organization Kyushu Medic
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Tanaka Hiroyuki
Department Of Chemistry Konan University
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Furuya Kazuhito
Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Tokyo Inst. Technol. Tokyo Jpn
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Miyamoto Yasuyuki
Tokyo Institute of Technology
著作論文
- InP Hot Electron Transistors with a Buried Metal Gate
- Proposal for a Solid State Biprism Device
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode
- Phase-Breaking Effect Appearing in the Current-Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes - Theoretical Fitting Over Four Orders of Magnitude -
- Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes : Theoretical Fitting Over Four Orders of Magnitude
- X-Ray Diffraction and Mossbauer Spectroscopic Studies of FePS_3-Alkylamines Intercalation Compounds
- Isothermal Tetragonal to Monoclinic Phase Transition around Room Temperature in 2.0mol% Yittria-doped Zirconia Ceramics
- Mixed Anion Effect on Conductivity of the Glasses in the System AgI-Ag_2MoO_4-AgPO_3
- Current Peak Characteristics of Triple-Barrier Resonant-Tanneling Diodes with and without Phase Breaking : Semiconductors