MACHIDA Nobuya | Department of Physical Electronics, Tokyo Institute of Technology
スポンサーリンク
概要
関連著者
-
MACHIDA Nobuya
Department of Physical Electronics, Tokyo Institute of Technology
-
Machida Nobuya
Department Of Chemistry Konan University
-
町田 信也
東京工業大学大学院理工学研究科:科学技術振興機構crest
-
FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
-
Machida N
Konan Univ. Kobe
-
Furuya Kazuhito
Department Of Electrical And Electronic Engineering
-
Furuya Keiichi
Department Of Industiral Chemistry Faculty Of Engineering The University Of Tokyo
-
Nagase Masanori
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
-
Furuya K
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
-
Nagase M
Ntt Basic Research Laboratories Ntt Corporation
著作論文
- InP Hot Electron Transistors with a Buried Metal Gate
- Proposal for a Solid State Biprism Device
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode
- Phase-Breaking Effect Appearing in the Current-Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes - Theoretical Fitting Over Four Orders of Magnitude -
- Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes : Theoretical Fitting Over Four Orders of Magnitude
- X-Ray Diffraction and Mossbauer Spectroscopic Studies of FePS_3-Alkylamines Intercalation Compounds
- Isothermal Tetragonal to Monoclinic Phase Transition around Room Temperature in 2.0mol% Yittria-doped Zirconia Ceramics
- Mixed Anion Effect on Conductivity of the Glasses in the System AgI-Ag_2MoO_4-AgPO_3
- Current Peak Characteristics of Triple-Barrier Resonant-Tanneling Diodes with and without Phase Breaking : Semiconductors