Current Peak Characteristics of Triple-Barrier Resonant-Tanneling Diodes with and without Phase Breaking : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-12-15
著者
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MACHIDA Nobuya
Department of Physical Electronics, Tokyo Institute of Technology
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Nagase Masanori
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Machida Nobuya
Department Of Chemistry Konan University
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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FURUTA Kazuhito
Department of Physical Electronics, Graduate School of Science and Engineering,Tokyo Institute of Te
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KURAHASHI Masaki
Department of Physical Electronics, Graduate School of Science and Engineering,Tokyo Institute of Te
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Kurahashi Masaki
National Institute For Materials Science
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Machida Nobuya
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Furuta Kazuhito
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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