Fabrication of GaInAs/InP Heterojunction Bipolar Transistors with a Single Tungsten Wire as Collector Electrode

概要

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GaInAs/InP heterojunction bipolar transistors (HBTs) with a single 0.1-μm-wide tungsten wire were fabricated. The tungsten wire was buried in an undoped InP collector layer and functioned as a collector electrode. In a previous process of fabricating HBTs with buried wires, we could not achieve a device operation with only a single wire. One of the possible reasons for this failure was the insufficient growth of the buried wire, because this wire requires a long growth time. The nonuniformity of facet formation in a previous wet etching process used to fabricate an InP emitter also contributed to the failure. By increasing the growth time of the buried wire and changing the wet etching solution used to enable uniform fabrication of emitter mesas, we observed a transistor operation with a current gain of 20 in the fabricated HBT. The emitter area of the device was $0.1\times 0.5$ μm2.
Japan Society of Applied Physicsの論文
2003-12-15