Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes
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概要
- 論文の詳細を見る
The influence of well impurity doping on the performance of GaInAs/InP resonant tunneling diodes (RTDs) was investigated. For undoped diodes, the peak-to-valley (P/V) current ratio was 9.7, at 2×10^<17> cm^<-3> it was 10.8, and at 2×10^<18> cm^<-3> it was 4.0. The maximum at 2×10^<17> cm^<-3> can be explained by potential bending, and thedecrease at 2×10^<18> cm^<-3> can be explained by scattering. A change in the current-voltage characteristics at adoping level of 2×10^<18> cm^<-3> can be explained by potential bending in the well. Moreover, the variation in the observed width of the resonance level can explain the change in P/V ratios.
- 社団法人応用物理学会の論文
- 1993-02-15
著者
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SEKIGUCHI Tomonori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Sekiguchi Tomonori
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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