InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
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概要
- 論文の詳細を見る
- 2013-03-25
著者
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Chang Edward-yi
Department Of Materials Science And Engineering And Microelectronics And Information System Research
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Kuo Chien-i
Department Of Materials Science And Engineering National Chiao-tung University
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Chiang Che-yang
Department Of Communications Engineering Yuan Ze University
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Hsu Heng-Tung
Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan
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MIYAMOTO Yasuyuki
Department of Physical Electrons, Tokyo Institute of Technology
関連論文
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- High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Light Emission from Quantum-Box Structure by Current Injection
- High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High-Velocity Flow
- Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
- Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
- Theoretical Gain of Quantum-Well Wire Lasers
- Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
- Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
- Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
- First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
- Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
- Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
- Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs
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- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
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- Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer
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- Wet Chemical Etching for Ultrafine Periodic Structure : Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth : Etching and Deposition Technology
- Observation of InP Surfaces after (NH_4)_2S_x Treatment by a Scanning Tunneling Microscope
- Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs(Semiconductor Materials and Devices)
- Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes
- V-Band Flip-Chip Assembled Gain Block Using In_Ga_As Metamorphic High-Electron-Mobility Transistor Technology
- High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
- Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
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- Reduction of Output Conductance in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region
- Growth of High-Quality In_Ga_N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
- Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
- Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz
- InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
- Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
- Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
- Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO_2 Wires
- DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
- Double $\delta$-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application
- Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN
- Silicon Nitride Nanopillars and Nanocones Formed by Nickel Nanoclusters and Inductively Coupled Plasma Etching for Solar Cell Application
- High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications
- Observation of Current Modulation through Self-Assembled Monolayer Molecule in Transistor Structure
- Metamorphic In0.53Ga0.47As Metal–Oxide–Semiconductor Structure on a GaAs Substrate with ZrO2 High-$k$ Dielectrics
- Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
- Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases
- InP Hot Electron Transistors with a Buried Metal Gate
- Fabrication of GaInAs/InP Heterojunction Bipolar Transistors with a Single Tungsten Wire as Collector Electrode
- InP/InGaAs Hot Electron Transistors with Insulated Gate
- Design and Simulation of Hot-Electron Diffraction Observation Using Scanning Probe: Quantitative Evaluation of Observation Possibility
- High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal--Insulator--Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
- Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation
- Wet Chemical Etching for Ultrafine Periodic Structure: Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth
- Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology
- Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
- High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa (Special Issue : Solid State Devices and Materials)
- Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications