Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology

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概要

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• In this study, we have fabricated and characterized an In<inf>0.6</inf>Ga<inf>0.4</inf>As metamorphic high-electron-mobility transistor (mHEMT) device packaged using flip-chip-on-board (FCOB) technology. A low-cost polymer substrate was adopted as the carrier for cost-effective purposes. The impact of bonding temperature on the device performance was also experimentally investigated. While the DC performance was not as sensitive, serious degradation in RF performance was observed at high bonding temperature. Such degradation was mainly due to the thermal-mechanical stress resulting from the mismatch in the coefficient of thermal expansion (CTE) between the GaAs chip and the polymer substrate. Quantitative assessment was also performed through equivalent circuit extraction from S-parameter measurements.

• 2013-12-25

著者

• Wang Chin-te

  Department Of Materials Science And Engineering National Chiao-tung University

• Chiang Che-yang

  Department Of Communications Engineering Yuan Ze University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Hsu Heng-Tung

  Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan

• Lim Wee-Chin

  Department of Material Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan

• Hsu Heng-Tung

  Department of Communications Engineering, Yuan Ze University, Chunli 320, Taiwan

• Wang Chin-Te

  Department of Material Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan

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