WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors
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概要
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A new technique using WSiN film as a protective cap layer of the internal ohmic metallization scheme and the GaN surface was developed to improve the surface morphology of the contact of AlGaN/GaN high electron mobility transistors (HEMTs). After annealing, this layer was selectively removed by patterning and dry etching. Metal contact surfaces covered with WSiN preserved a good surface morphology and edge definition. Moreover, the devices have a saturation current of 1 A/mm and a maximum transconductance of 235 mS/mm. When biased at 30 V, the output power density is 5.8 W/mm at 2 GHz. These results indicate a damage-free process for the smooth ohmic contacts formation.
- 2009-11-25
著者
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Trankle Gunther
Ferdinand-braun-institut Fur Hochstfrequenztechnik
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Chang Edward
Department Of Communications Engineering Yuan Ze University
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Chaturvedi Nidhi
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489, Germany
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Lu Chung
Department of Materials Science and Engineering, National Chiao-Tung University, 1001 University Rd, Hsinchu 300, Taiwan
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Hilt Oliver
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489, Germany
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Lossy Richard
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489, Germany
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John Wilfred
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489, Germany
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Würfl Joachim
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489, Germany
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Hilt Oliver
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489, Germany
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John Wilfred
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489, Germany
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Lossy Richard
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489, Germany
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Chang Edward
Department of Materials Science and Engineering, National Chiao-Tung University, 1001 University Rd, Hsinchu 300, Taiwan
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Würfl Joachim
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489, Germany
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