CBE Grown (GaIn)(AsP) Laser Diodes for Monolithic Integration

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概要

• 論文の詳細を見る

• Selective in-filling growth by chemical beam epitaxy (CBE) is ideally suited for the monolithic integration of InP-based laser diodes and photonic devices. The growth was carried out on exactly oriented (100) n-InP substrates as well as on 2°off toward next [110] oriented substrates. The preparation of the substrates and the growth parameters, e.g. growth rate, strongly influences the shape and optical properties of embedded (GaIn)(AsP) laser diodes shown by scanning electron microscopy (SEM) and spatially resolved cathodoluminescence (CL) measurements. By reducing the growth rate from 1.3 μm/h to 0.4 μm/h at a high V/III_<BEP> ratio of 18 during the growth of the InP buffer flat layers are grown within narrow grooves. Separate confinement heterostructure (SCH) multi quantum well (MQW) laser diodes (λ=1.55 μm) with cleaved mirrors selectively in-filled in 3 μm wide grooves show a device performance comparable to conventional 'state of the art' quaternary laser diodes; e.g. lasers with 6 QW show threshold currents of 16 mA and light output of several mW in CW operation. By butt joining we integrated quaternary ridge waveguide (RW) laser diodes and waveguides.

• 社団法人応用物理学会の論文
• 1997-03-30

著者

• WEIMANN Gunter

  Fraunhofer Institute of Applied Solid State Physics

• Kratzer Heinrich

  Walter-schottky-institut Tu Munchen

• Trankle Gunther

  Ferdinand-braun-institut Fur Hochstfrequenztechnik

• Weimann G

  Waiter-schottky-institut Technische Universitit Minchen:(present Address)fraunhofer Institut Fur Ang

• Weimann Gunter

  Fraunhofer-institut Fur Angewandte Festkorperphysik

• Nutsch Andreas

  Walter-schottky-institut Tu Munchen

• Torabi Bahram

  Walter-schottky-institut Tu Munchen

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