InP DHBT Based IC Technology for over 80Gbit/s Data Communications(High-Speed HBTs and ICs,<Special Section>Heterostructure Microelectronics with TWHM2005)
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概要
- 論文の詳細を見る
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The InGaAs/InP DHBTs were grown by MBE and fabricated using conventional process techniques. Devices with an emitter junction area of 4.8μm^2 exhibited peak cutoff frequency (f_T) and maximum oscillation frequency (f_<MAX>) values of 265 and 305GHz, respectively, and a breakdown voltage (BV_<CEo>) of over 5V. Using this technology, a set of mixed-signal IC building blocks for ≥80Gbit/s fibre optical links, including distributed amplifiers (DA), voltage controlled oscillators (VCO), and multiplexers (MUX), have been successfully fabricated and operated at 80Gbit/s and beyond.
- 社団法人電子情報通信学会の論文
- 2006-07-01
著者
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Driad Rachid
Fraunhofer Institute Of Applied Solid State Physics
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MAKON Robert
Fraunhofer Institute of Applied Solid State Physics
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SCHNEIDER Karl
Fraunhofer Institute of Applied Solid State Physics
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NOWOTNY Ulrich
Fraunhofer Institute of Applied Solid State Physics
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AIDAM Rolf
Fraunhofer Institute of Applied Solid State Physics
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QUAY Rudiger
Fraunhofer Institute of Applied Solid State Physics
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SCHLECHTWEG Michael
Fraunhofer Institute of Applied Solid State Physics
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MIKULLA Michael
Fraunhofer Institute of Applied Solid State Physics
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WEIMANN Gunter
Fraunhofer Institute of Applied Solid State Physics
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Quay Rudiger
Fraunhofer Institute Applied Solid-state Physics
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Aidam Rolf
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
関連論文
- InP DHBT Based IC Technology for over 80Gbit/s Data Communications(High-Speed HBTs and ICs,Heterostructure Microelectronics with TWHM2005)
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