(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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Ambacher Oliver
Fraunhofer Institute Applied Solid-state Physics
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Maroldt Stephan
Fraunhofer Institute Applied Solid-state Physics
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Quay Rudiger
Fraunhofer Institute Applied Solid-state Physics
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Waltereit Patrick
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Dennler Philippe
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Schwantuschke Dirk
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Musser Markus
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Dammann Michael
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Tessmann Axel
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Ambacher Oliver
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Aidam Rolf
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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- AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific Detectivity D^{*}
- (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies
- (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies (Special Issue : Recent Advances in Nitride Semiconductors)