Ambacher Oliver | Fraunhofer Institute Applied Solid-state Physics
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概要
関連著者
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Ambacher Oliver
Fraunhofer Institute Applied Solid-state Physics
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Maroldt Stephan
Fraunhofer Institute Applied Solid-state Physics
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Quay Rudiger
Fraunhofer Institute Applied Solid-state Physics
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Waltereit Patrick
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Dennler Philippe
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Schwantuschke Dirk
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Musser Markus
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Dammann Michael
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Tessmann Axel
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Driad Rachid
Fraunhofer Institute Of Applied Solid State Physics
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AIDAM Rolf
Fraunhofer Institute of Applied Solid State Physics
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QUAY Rudiger
Fraunhofer Institute of Applied Solid State Physics
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Kohler Klaus
Fraunhofe-institut Fur Angewandte Festkorperphysik
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WIEGNER Dirk
Alcatel-Lucent Bell Labs Germany Radio Communications-Dept. ZFZ/RA4
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VITANOV Stanislav
Advanced Materials and Device Analysis Group, Inst. for Microelectronics, TU Wien
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PALANKOVSKI Vassil
Advanced Materials and Device Analysis Group, Inst. for Microelectronics, TU Wien
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Vitanov Stanislav
Advanced Materials And Device Analysis Group Inst. For Microelectronics Tu Wien
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Palankovski Vassil
Advanced Materials And Device Analysis Group Inst. For Microelectronics Tu Wien
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PLETSCHEN Wilfried
Fraunhofer-Institut fur Angewandte Festkorperphysik
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KIRSTE Lutz
Fraunhofer-Institut fur Angewandte Festkorperphysik
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Ambacher Oliver
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany
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Haupt Christian
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany
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Müller Stefan
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany
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Schippel Christian
Ilmenau Technical University, Department for Solid State Electronics, P.O. Box 100565, 98694 Ilmenau, Germany
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Schwierz Frank
Ilmenau Technical University, Department for Solid State Electronics, P.O. Box 100565, 98694 Ilmenau, Germany
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Pletschen Wilfried
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany
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Maroldt Stephan
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany
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Müller Stefan
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany
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Walther Martin
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany
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Maroldt Stephan
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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John Oliver
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany
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Driad Rachid
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany
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Albrecht Björn
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany
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Kopta Susanne
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany
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Kopta Susanne
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany
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Ambacher Oliver
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany
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Ambacher Oliver
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Aidam Rolf
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Kirste Lutz
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany
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Kirste Lutz
Fraunhofer-Institut für Angewandte Festkörperphysik, 79108 Freiburg, Germany
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Albrecht Björn
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany
著作論文
- Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2GHz
- Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation
- AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific Detectivity D^{*}
- (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies
- (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies (Special Issue : Recent Advances in Nitride Semiconductors)