Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2GHz

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概要

• 論文の詳細を見る

• This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode class-D (CMCD)/class-S MMICs for data rates of up to 8Gbit/s equivalent to 2GHz RF-operation. The device needs for switch-mode operation are derived and verified by MMIC results in class-S and class-D operation. To the authors knowledge, this is the first time 2GHz-equivalent digital-switch-mode RF-operation is demonstrated with GaN HEMTs with high efficiency.

• （社）電子情報通信学会の論文
• 2010-08-01

著者

• QUAY Rudiger

  Fraunhofer Institute of Applied Solid State Physics

• Ambacher Oliver

  Fraunhofer Institute Applied Solid-state Physics

• Maroldt Stephan

  Fraunhofer Institute Applied Solid-state Physics

• Quay Rudiger

  Fraunhofer Institute Applied Solid-state Physics

• WIEGNER Dirk

  Alcatel-Lucent Bell Labs Germany Radio Communications-Dept. ZFZ/RA4

• VITANOV Stanislav

  Advanced Materials and Device Analysis Group, Inst. for Microelectronics, TU Wien

• PALANKOVSKI Vassil

  Advanced Materials and Device Analysis Group, Inst. for Microelectronics, TU Wien

• Vitanov Stanislav

  Advanced Materials And Device Analysis Group Inst. For Microelectronics Tu Wien

• Palankovski Vassil

  Advanced Materials And Device Analysis Group Inst. For Microelectronics Tu Wien

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• Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2GHz
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• AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific Detectivity D^{*}
• (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies
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