Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation

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概要

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• By combining a low damage chlorine based gate-recess etching and a sophisticated technology for AlGaN/GaN depletion-mode high electron mobility transistors (HEMTs) we fabricated high performance recessed enhancement-mode HEMTs. A comparative investigation of depletion- and enhancement-mode devices prepared by this technique shows excellent DC and RF properties. A transconductance of 540 mS/mm and cut-off frequencies $ f_{\text{T}}$ of 39 GHz and $ f_{\text{max}}$ of 74 GHz were obtained for 0.25 μm gate enhancement-mode HEMTs. Large-signal power measurements at 2 GHz reveal an output power density of 4.6 W/mm at 68% PAE conclusively demonstrating the capability of our enhancement-mode devices.

• 2009-04-25

著者

• Ambacher Oliver

  Fraunhofer Institute Applied Solid-state Physics

• Maroldt Stephan

  Fraunhofer Institute Applied Solid-state Physics

• Quay Rudiger

  Fraunhofer Institute Applied Solid-state Physics

• PLETSCHEN Wilfried

  Fraunhofer-Institut fur Angewandte Festkorperphysik

• Ambacher Oliver

  Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany

• Haupt Christian

  Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany

• Müller Stefan

  Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany

• Schippel Christian

  Ilmenau Technical University, Department for Solid State Electronics, P.O. Box 100565, 98694 Ilmenau, Germany

• Schwierz Frank

  Ilmenau Technical University, Department for Solid State Electronics, P.O. Box 100565, 98694 Ilmenau, Germany

• Pletschen Wilfried

  Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany

• Maroldt Stephan

  Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany

• Müller Stefan

  Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany

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• Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation
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• (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies
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