(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies

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概要

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• The suitability of the AlGaN/GaN heterostructure for applications up to 20 GHz is demonstrated based on a technically mature process. A broadband power amplifier integrated circuit is designed and fabricated in order to monitor the technology performance. Further, a 100 W power transistor for mobile communications is realized with an efficiency of 70% and an operation frequency of up to 3 GHz. We also demonstrate the performance of a 60 W switch-mode power amplifier module with 75% efficiency for industrial, scientific and medical applications at 2.4 GHz. To push the technology towards higher millimeter-wave frequencies an InAlGaN-based heterostructure was developed. This structure yields high sheet carrier concentration and mobility of 1.9\times 10^{13} cm^-2and 1590 cm²V^-1s^-1, respectively. An excellent f_{\text{T}} of 110 GHz and f_{\text{max}} of 190 GHz were achieved with HFETs with a gate length of 100 nm. This allowed the realization of InAlGaN-based power amplifier monolithic microwave integrated circuits (MMICs) operating at millimeter-wave frequencies of 60 and 94 GHz.

• 2013-08-25

著者

• AIDAM Rolf

  Fraunhofer Institute of Applied Solid State Physics

• Ambacher Oliver

  Fraunhofer Institute Applied Solid-state Physics

• Maroldt Stephan

  Fraunhofer Institute Applied Solid-state Physics

• Quay Rudiger

  Fraunhofer Institute Applied Solid-state Physics

• Maroldt Stephan

  Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany

• Waltereit Patrick

  Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany

• Dennler Philippe

  Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany

• Schwantuschke Dirk

  Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany

• Musser Markus

  Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany

• Dammann Michael

  Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany

• Tessmann Axel

  Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany

関連論文

• InP DHBT Based IC Technology for over 80Gbit/s Data Communications(High-Speed HBTs and ICs,Heterostructure Microelectronics with TWHM2005)
• Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2GHz
• Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation
• AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific Detectivity D^{*}
• (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies
• (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies (Special Issue : Recent Advances in Nitride Semiconductors)

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