Aidam Rolf | Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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概要
- Aidam Rolfの詳細を見る
- 同名の論文著者
- Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germanyの論文著者
関連著者
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Quay Rudiger
Fraunhofer Institute Applied Solid-state Physics
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Aidam Rolf
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Driad Rachid
Fraunhofer Institute Of Applied Solid State Physics
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MAKON Robert
Fraunhofer Institute of Applied Solid State Physics
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SCHNEIDER Karl
Fraunhofer Institute of Applied Solid State Physics
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NOWOTNY Ulrich
Fraunhofer Institute of Applied Solid State Physics
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AIDAM Rolf
Fraunhofer Institute of Applied Solid State Physics
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QUAY Rudiger
Fraunhofer Institute of Applied Solid State Physics
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SCHLECHTWEG Michael
Fraunhofer Institute of Applied Solid State Physics
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MIKULLA Michael
Fraunhofer Institute of Applied Solid State Physics
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WEIMANN Gunter
Fraunhofer Institute of Applied Solid State Physics
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Ambacher Oliver
Fraunhofer Institute Applied Solid-state Physics
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Maroldt Stephan
Fraunhofer Institute Applied Solid-state Physics
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Waltereit Patrick
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Dennler Philippe
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Schwantuschke Dirk
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Musser Markus
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Dammann Michael
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Tessmann Axel
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
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Ambacher Oliver
Fraunhofer Institute for Applied Solid-State Physics (IAF), 79108 Freiburg, Germany
著作論文
- InP DHBT Based IC Technology for over 80Gbit/s Data Communications(High-Speed HBTs and ICs,Heterostructure Microelectronics with TWHM2005)
- (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies (Special Issue : Recent Advances in Nitride Semiconductors)