V-Band Flip-Chip Assembled Gain Block Using In_<0.6>Ga_<0.4>As Metamorphic High-Electron-Mobility Transistor Technology

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概要

• 論文の詳細を見る
• 2011-10-25

著者

• Chang Edward

  Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc

• Kuo Chien-i

  Department Of Materials Science And Engineering National Chiao-tung University

• Wang Chin-te

  Department Of Materials Science And Engineering National Chiao-tung University

• CHIANG Che-Yang

  Department of Communications Engineering, Yuan Ze University

• HSU Heng-Tung

  Department of Communications Engineering, Yuan Ze University

• HSU Heng-Shou

  Department of Electronic Engineering, Feng Chia University

• Hsu Heng-tung

  Department Of Communications Engineering Yuan Ze University

• Chiang Che-yang

  Department Of Communications Engineering Yuan Ze University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Hsu Heng-Tung

  Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan

• Wang Chin-Te

  Department of Material Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan

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