Kuo Chien-i | Department Of Materials Science And Engineering National Chiao-tung University
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概要
関連著者
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Kuo Chien-i
Department Of Materials Science And Engineering National Chiao-tung University
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Hsu Heng-Tung
Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan
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Chang Edward
Department Of Communications Engineering Yuan Ze University
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Hsu Heng-tung
Department Of Communications Engineering Yuan Ze University
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Chiang Che-yang
Department Of Communications Engineering Yuan Ze University
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Chang Edward-yi
Department Of Materials Science And Engineering And Microelectronics And Information System Research
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Chang Chia-yuan
Department Of Chemical Engineering National Taiwan University
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Wang Chin-te
Department Of Materials Science And Engineering National Chiao-tung University
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Chang Edward
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Hsiao Yu-Lin
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Hsu Ching-Yi
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Hsiao Yu-Lin
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
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Hsu Heng-Tung
Department of Communications Engineering, Yuan Ze University, Chungli 32003, Taiwan, R.O.C.
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Wang Chin-Te
Department of Material Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
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CHEN Chun-Chi
National Nano Device Laboratories
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Chyi Jen-inn
Department Of Electrical Engineering National Central University
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Chen Szu-hung
Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc
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Chang Edward
Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc
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CHIANG Che-Yang
Department of Communications Engineering, Yuan Ze University
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HSU Heng-Tung
Department of Communications Engineering, Yuan Ze University
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HSU Heng-Shou
Department of Electronic Engineering, Feng Chia University
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Lin Kung-liang
Department Of Materials Science And Engineering National Chiao Tung University
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Chang Chia-hua
Department Of Materials Science And Engineering National Chiao-tung University
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Chang Edward
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
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Chang Edward
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
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Wu Chien-Ying
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Chen Yu-Lin
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Lu Lung-Chi
Degree Program of Semiconductor Material and Process Equipment, College of Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
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Wu Chia-Hsun
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
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Maa Jer-Shen
Institute of Lighting and Energy Photonics, College of Photonics, National Chiao-Tung University, Tainan 71150, Taiwan
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Luong Tien-Tung
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
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Huang Wei-Ching
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
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Dee Chang
Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600, Bangi, Selangor, Malaysia
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Majlis Burhanuddin
Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600, Bangi, Selangor, Malaysia
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Tsern Wen-Chung
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Chu Li-Hsin
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Lien Yi-Chung
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Yu Chia-Hui
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Ho Han-Chieh
Department of Electrical Engineering, National Central University, Jhongli, Taiwan 32001, R.O.C.
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Lin Kung-Liang
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
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Wang Chin-Te
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
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Kuo Chien-I
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Lim Wee-Chin
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
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Chang Chia-Yuan
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Chiang Che-Yang
Department of Communications Engineering, Yuan Ze University, Chungli, Taiwan 32003, R.O.C.
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Hsu Li-Han
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
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Kuo Chien-I
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
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Hsu Heng-Tung
Department of Communications Engineering, Yuan Ze University, Chungli, Taiwan 32003, R.O.C.
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CHEN Szu-Hung
Department of Materials and Mineral Resources Engineering, National Taipei University of Technology
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Chyi Jen-Inn
Department of Electrical Engineering, National Central University, Jhongli, Taiwan 32001, R.O.C.
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Miyamoto Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan
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Chen Chun-Chi
National Nano Device Laboratories, No. 26, Prosperity Road 1, Science-based Industrial Park, Hsinchu, Taiwan 30078, R.O.C.
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Miyamoto Yasuyuki
Department of Physical Electrons, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Miyamoto Yasuyuki
Department of Physical Electrons, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Fatah Faiz
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Chang Edward-Yi
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.
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Chiang Che-Yang
Department of Communications Engineering, Yuan Ze University, Chungli 32003, Taiwan, R.O.C.
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Lim Wee-Chin
Department of Material Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
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Kuo Chien-I
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.
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MIYAMOTO Yasuyuki
Department of Physical Electrons, Tokyo Institute of Technology
著作論文
- Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
- V-Band Flip-Chip Assembled Gain Block Using In_Ga_As Metamorphic High-Electron-Mobility Transistor Technology
- InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
- Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz
- Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
- Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
- DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
- High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications
- Metamorphic In0.53Ga0.47As Metal–Oxide–Semiconductor Structure on a GaAs Substrate with ZrO2 High-$k$ Dielectrics
- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
- InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications