Hsu Ching-Yi | Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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概要
- Hsu Ching-Yiの詳細を見る
- 同名の論文著者
- Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.の論文著者
関連著者
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Kuo Chien-i
Department Of Materials Science And Engineering National Chiao-tung University
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Chang Edward
Department Of Communications Engineering Yuan Ze University
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Hsu Ching-Yi
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Hsu Heng-Tung
Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan
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Chyi Jen-inn
Department Of Electrical Engineering National Central University
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Hsu Heng-tung
Department Of Communications Engineering Yuan Ze University
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Chiang Che-yang
Department Of Communications Engineering Yuan Ze University
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Chang Edward
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Yu Chia-Hui
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Ho Han-Chieh
Department of Electrical Engineering, National Central University, Jhongli, Taiwan 32001, R.O.C.
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Chiang Che-Yang
Department of Communications Engineering, Yuan Ze University, Chungli, Taiwan 32003, R.O.C.
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Hsu Heng-Tung
Department of Communications Engineering, Yuan Ze University, Chungli, Taiwan 32003, R.O.C.
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Chyi Jen-Inn
Department of Electrical Engineering, National Central University, Jhongli, Taiwan 32001, R.O.C.
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Miyamoto Yasuyuki
Department of Physical Electrons, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Fatah Faiz
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
著作論文
- Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz
- Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching