Chang Edward | Department Of Communications Engineering Yuan Ze University

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著作論文

A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier
A 1.2-V Operation Power Pseudomorphic High Electron Mobility Transistor for Personal Handy Phone Handset Application
Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations
A Comparison of the Microstructural Feature and Bonding Strength of Plasma-Sprayed Hydroxyapatite Coatings with Hydrothermal and Vacuum Post-Heat Treatment
Interfacial Characterization of Porcelain Veneered on the Pure Titanium under Vacuum Firing
Adherence of Porcelain Veneered on Titanium with an Intermediate Plasma-Sprayed Zirconia Layer
New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
Controlled Placement of Self-Organized Ge Dots on Patterned Si(001) Surfaces
Flower-Like Distribued Self-Oranized Ge Dots on Patterned Si (001) Substrates
A Mechanism of Porosity Distribution in A356 Aluminum Alloy Castings
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
Highly Selective GaAs/Al_Ga_As Wet Etch Process for the Gate Recess of Low-Voltage-Power Pseudomorphic High-Electron-Mobility Transistor
Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
Novel I-Line Phase Shift Mask Technique for Submicron T-Shaped Gate Formation
WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors
Independent Tuning of the Confinement and Density in a Quantum Point Contact using a Center Gate and a Back Gate
High-Quality 1 eV In0.3Ga0.7As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell Application
V-Band Flip-Chip Assembled Gain Block Using In_Ga_As Metamorphic High-Electron-Mobility Transistor Technology
Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO_2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors
InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In_Ga_As and In_Ga_As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz
Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10° off Misoriented GaAs Substrate
Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers
InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Cu/Pt/Ti Gate and Cu Airbridges
New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors
DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications
Growth of High-Quality Ge Epitaxial Layers on Si (100)
Metamorphic In0.53Ga0.47As Metal–Oxide–Semiconductor Structure on a GaAs Substrate with ZrO2 High-$k$ Dielectrics
Mechanism of Microstructure Evolution for the Cu/Ta/GaAs Structure after Thermal Annealing
Gold-Free Fully Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor
Band Alignment Parameters of Al
Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology
Band Alignment Parameters of Al₂O₃/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures

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