High-Quality 1 eV In_0.3Ga_0.7As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell Application

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概要

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• In_0.3Ga_0.7As layers were grown by metalorganic chemical vapor deposition using step graded buffer layers on different misoriented GaAs(001) substrates. Smooth-surface In_0.3Ga_0.7As film with a root mean square roughness of 1.9 nm was obtained with the growth temperature of 490 °C using a 10-step graded parabolic-like indium profile buffer layer on the surface with the 6°-off cut toward the [111] direction. The threading dislocation density in the film was determined to be $1.2\times 10^{6}$ cm-2 by transmission electron microscopy. The photoluminescence results obtained at 300 and 77 K indicate that very low recombination centers existed in the epilayer.

• 2011-07-25

著者

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• YU Hung

  Department of Materials Science and Engineering, National Chiao Tung University

• LIN Kung

  Department of Materials Science and Engineering, National Chiao Tung University

• CHUNG Chen

  Department of Materials Science and Engineering, National Chiao Tung University

• Nguyen Hong

  Department of Electrical and Computer Engineering, Yokohama National University

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