InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Cu/Pt/Ti Gate and Cu Airbridges

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概要

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• The use of a Cu/Pt/Ti Schottky contact structure and Cu-based airbridges for high-frequency metamorphic high electron mobility transistor (MHEMT) is successfully developed. The material characteristics of the Cu/Pt/Ti Schottky contact on i-InAlAs were studied. Judging from the results of the X-ray diffraction analysis, Auger electron spectroscopy, and transmission electron microscopy, the Cu/Pt/Ti Schottky contact structure on InAlAs was very stable after annealing at 350 °C. However, after 400 °C annealing, the reaction of copper with the layers underneath started to occur and formed the Cu4Ti phase. The Cu-metallized MHEMT using the proposed Cu/Pt/Ti T-gate structure and Cu-based airbridges has a saturated drain current of 673 mA/mm and a maximum transconductance of 750 mS/mm. The gate to drain breakdown voltage measured was 14.5 V at a gate reverse current of $-1$ mA/mm. The device also demonstrated a cutoff frequency $F_{\text{t}}$ of 90 GHz and a maximum frequency of oscillation $F_{\text{max}}$ of 165 GHz. An MHEMT with a Au/Pt/Ti gate was fabricated and compared with an MHEMT fabricated with the proposed Cu/Pt/Ti gate. These two kinds of MHEMTs showed similar $F_{\text{t}}$ and $F_{\text{max}}$. These results demonstrate that the Cu/Pt/Ti T-gate and Cu-based airbridges can be used for MHEMT fabrication with excellent electrical characteristics.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-05-15

著者

• Chen Szu-hung

  Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc

• Chang Chun-wei

  Department Of Industrial Education National Taiwan Normal University

• Hsieh Tsung-eong

  Department Of Materials Science And Engineering National Chiao Tung University

• Lee Huang-ming

  Department Of Materials Science And Engineering Microelectronics And Information Systems Research Ce

• Liang Muh-wang

  Department Of Materials Science And Engineering National Chiao Tung University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Hsieh Tsung-Eong

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chen Po-Chou

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Sahoo Kartik

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chang Edward

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Lee Huang-Ming

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chang Chun-Wei

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chen Szu-Hung

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• CHEN Szu-Hung

  Department of Materials and Mineral Resources Engineering, National Taipei University of Technology

• Liang Muh-Wang

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Hsieh Tsung-Eong

  Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

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