Electroless Copper/Nickel Films Deposited on AlN Substrates
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概要
- 論文の詳細を見る
In this work, we studied the application of electroless copper/nickel (Cu/Ni) films deposited on aluminum nitride (AlN) substrates to high-frequency power GaAs device packaging. Experimental results showed metal films deposited on polished AlN surfaces possess a flatter surface, a finer grain structure, and a lower resistivity than those on unpolished surfaces. On unpolished AlN substrates, rough-surface-induced voids appear in the film interface during grain clustering, therefore deteriorating the electrical conductivity of the deposited layers. Pull-off tests revealed that the Cu/Ni films strongly adhered on both types of AlN substrates and that the adhesion strength exceeded 761 kg/cm2. The Ni film remained a mixture of amorphous and microcrystalline structures, and the Cu film was polycrystalline. The resistivity of the Cu/Ni film was decreased by annealing process, which in turn decreased the number of crystal defects in the films. Subsequent Pb-Sn solder bumping experiments indicated the amorphous Ni(P) film was a good diffusion barrier layer since Sn could not diffuse through it.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-12-15
著者
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Hsieh Tsung-eong
Department Of Materials Science And Engineering National Chiao Tung University
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Liang Muh-Wang
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 300
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Chen Chi-Chin
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 300
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Hung Yuan-Te
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 300
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Chen Chi-chin
Department Of Materials Science And Engineering National Chiao Tung University
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Liang Muh-wang
Department Of Materials Science And Engineering National Chiao Tung University
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Hung Yuan-te
Department Of Materials Science And Engineering National Chiao Tung University
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Hsieh Tsung-Eong
Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
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