Enhancing the Overwriting Characteristics of Phase-Change Optical Disks by Doping in Dielectric Layers

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概要

• 論文の詳細を見る

• In this work, we studied the enhancement of overwriting characteristics of phase-change optical disks by doping in the dielectric layers. The doping elements included chromium (Cr), molybdenum (Mo), nickel (Ni), tantalum (Ta), titanium (Ti), tungsten (W), vanadium (V), and nitrogen (N2). Dynamic test showed that doping with a certain amount of W and N2 in dielectric layers enhanced the disk overwriting characteristics. Up to fortyfold improvement in disk cycleability was observed when N2 gas was introduced during sputtering deposition of the upper dielectric layer at the gas flow rate of $\text{N$_{2}$/Ar}=25$%. Tungsten was the best among the doping metallic elements resulting in fivefold improvement in disk cycleability. Optical property measurement revealed that the refractive index ($n$) decreased with increasing N2 doping percentage, while the relatively small amount of metallic element doping negligibly changed the optical constants. Subsequent modulation simulation showed that such an optical property change is beneficial to disk overwriting characteristics. Nanoindentation test showed that N2 doping was the most effective method for increasing the hardness of the dielectric layer. This implies that, with increasing mechanical strength, the dielectric layer possesses better resistance to thermal deformation resulting from laser heating, thereby enhancing the cycleability of optical disks.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-09-15

著者

• Yeh Tung-ti

  Department Of Materials Science And Engineering National Chiao-tung University

• Yu Chien-hui

  Department Of Materials Science And Engineering National Chiao-tung University

• Hsieh Tsung-eong

  Department Of Materials Science And Engineering National Chiao Tung University

• Shieh Han-ping

  Institute Of Electro-optic Engineering National Chiao Tung University

• Yu Chien-Hui

  Department of Materials Science and Engineering, National Chiao-Tung University, 1001, Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.

• Hsieh Tsung-Eong

  Department of Materials Science and Engineering, National Chiao-Tung University, 1001, Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.

• Shieh Han-Ping

  Institute of Electric-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Shieh Han-Ping

  Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001, Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.

• Yeh Tung-Ti

  Department of Materials Science and Engineering, National Chiao-Tung University, 1001, Ta-Hsueh Rd., Hsinchu 30010, Taiwan, R.O.C.

• Hsieh Tsung-Eong

  Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

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