CHANG Edward | Department of Materials Science and Engineering, National Chiao Tung University

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概要

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著作論文

A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier
Gold-Free Fully Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor
A 1.2-V Operation Power Pseudomorphic High Electron Mobility Transistor for Personal Handy Phone Handset Application
Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations
A Comparison of the Microstructural Feature and Bonding Strength of Plasma-Sprayed Hydroxyapatite Coatings with Hydrothermal and Vacuum Post-Heat Treatment
Interfacial Characterization of Porcelain Veneered on the Pure Titanium under Vacuum Firing
Adherence of Porcelain Veneered on Titanium with an Intermediate Plasma-Sprayed Zirconia Layer
Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
Controlled Placement of Self-Organized Ge Dots on Patterned Si(001) Surfaces
Flower-Like Distribued Self-Oranized Ge Dots on Patterned Si (001) Substrates
Novel I-Line Phase Shift Mask Technique for Submicron T-Shaped Gate Formation
Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures

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