Growth of High-Quality In_<0.4>Ga_<0.6>N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 2011-11-25
著者
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Chang Edward-yi
Department Of Materials Science And Engineering And Microelectronics And Information System Research
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Lee Ching-ting
Department Of Electrical Engineering National Cheng Kung University
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Wong Yuen-yee
Department Of Materials Science And Engineering National Chiao-tung University
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Wong Yuen-yee
Department Of Materials Science And Engineering National Chiao Tung University
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Trinh Hai-dang
Department Of Materials Science And Engineering National Chiao-tung University
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Trinh Hai-dang
Department Of Materials Science And Engineering National Chiao Tung University
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Lin Kung-liang
Department Of Materials Science And Engineering National Chiao Tung University
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Sahoo Kartika
Taiwan Semiconductor Manufacturing Co. Ltd.
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Tran Binh-tinh
Department Of Materials Science And Engineering National Chiao Tung University
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LIN Hsiao-Yu
Department of Materials Science and Engineering, National Chiao Tung University
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HUANG Man-Chi
Department of Materials Science and Engineering, National Chiao Tung University
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NGUYEN Hong-Quan
Department of Materials Science and Engineering, National Chiao Tung University
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Lin Hsiao-yu
Department Of Materials Science And Engineering National Chiao Tung University
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Nguyen Hong-quan
Department Of Materials Science And Engineering National Chiao Tung University
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Huang Man-chi
Department Of Materials Science And Engineering National Chiao Tung University
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- Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO_2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors
- Growth of High-Quality In_Ga_N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
- Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In_Ga_As and In_Ga_As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
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