Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

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概要

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• AlGaN/GaN high-electron-mobility transistors (HEMTs) with different initial GaN growth modes were prepared on AlN/sapphire substrates. Secondary ion mass spectroscopy and Hall effect measurements confirmed that a highly conductive n-type region was generated at the GaN/AlN buffer interface during the three-dimensional to two-dimensional (3D–2D) growth mode transition. This n-type region was created by oxygen impurity incorporation during the 3D–2D growth mode transition, and its thickness increased with the transition time. The existence of this n-type conduction path not only changed the material properties but also degraded the device performance of HEMTs.

• 2014-08-28

著者

• Wong Yuen-yee

  Department Of Materials Science And Engineering National Chiao Tung University

• Wong Yuen-Yee

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.

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• Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

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