Observation of Current Modulation through Self-Assembled Monolayer Molecule in Transistor Structure
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概要
- 論文の詳細を見る
The modulation of drain current by gate voltage in a self-assembled monolayer (SAM) of benzene-1,4-dithiol was confirmed on the basis of the transistor structure. A device was fabricated by the shadow mask technique with an air-bridge structure. By electron beam lithography, the top area of the Au/SAM/Au junction was fabricated to be 370 nm by 230 nm. The measured current-voltage characteristics showed an exponential increase in drain current when drain voltage was increased and a decrease in drain current when gate bias was increased. Because the modulated drain current was greater than the gate leakage current, modulation by the gate bias was confirmed. However, no bonding was expected in the upper SAM/Au junction because the magnitude of the drain current was less than 100 pA.
- Japan Society of Applied Physicsの論文
- 2004-03-01
著者
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Azuma Yasuo
Department Of Applied Chemistry Tokai University
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Majima Yutaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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HASE Eiji
Department of Life Sciences, Nippon Sport Science University
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Sasao Kazuki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Kaneda Naotaka
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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