Frequency Dependences of Displacement Current and Channel Current in Pentacene Thin-Film Transistors

概要

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We demonstrate the gate voltage ($V_{\text{GS}}$) frequency dependences of displacement current ($I_{\text{dis}}$) and channel current ($I_{\text{DS}}$), which were simultaneously measured under the application of a triangular wave of $V_{\text{GS}}$ and a constant drain voltage in top-contact pentacene organic thin-film transistors (OTFTs). Carrier injection and carrier transport properties, such as field-effect mobility, threshold voltage, and carrier injection voltages at the source and drain electrodes, were evaluated; they showed no frequency dependences at frequencies between 1 and 50 kHz. From the source current $-V_{\text{GS}}$ and drain current $-V_{\text{GS}}$ characteristics, a charge sheet at the interface of the pentacene thin-film and gate dielectric was found to form below the source and drain electrodes in this frequency range. For the practical use of OTFTs, a simultaneous measurement system for $I_{\text{dis}}$ and $I_{\text{DS}}$ is a simple and powerful technique for evaluating both carrier injection and carrier transport properties under OTFT operations.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-04-25