Simultaneous Measurements of Drain-to-Source Current and Carrier Injection Properties of Top-Contact Pentacene Thin-Film Transistors

概要

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Drain-to-source current [$I_{\text{DS}}=(I_{\text{D}}-I_{\text{S}})/2$] and displacement current ($I_{\text{dis}}=I_{\text{S}}+I_{\text{D}}$) are evaluated using the simultaneous measurements of source ($I_{\text{S}}$) and drain ($I_{\text{D}}$) currents during the application of a constant drain voltage and a triangular-wave gate voltage ($V_{\text{GS}}$) to top-contact pentacene thin-film transistors. The carrier mobility, threshold voltages and mean potential drops at the source/channel and channel/drain interface are simultaneously obtained from $I_{\text{DS}}$–$V_{\text{GS}}$ and $I_{\text{dis}}$–$V_{\text{GS}}$ relationships. Carrier injection properties, namely, the carrier injection voltage at the source electrode and the mean potential drop–$V_{\text{GS}}$ relathionship are discussed on the basis of results of the simultaneous measurements of $I_{\text{DS}}$ and $I_{\text{dis}}$.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-01-15