Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-09-15
著者
-
Nagase Masao
Ntt Basic Research Laboratories
-
HORIGUCHI Seishi
Optoelectronics Joint Research Laboratory
-
Horiguchi Seiji
Ntt Basic Research Laboratories
-
Horiguchi Seiji
Ntt Basic Research Laboratories Ntt Corporation
-
Nagase M
Ntt Basic Research Laboratories Ntt Corporation
-
NAMATSU Hideo
NTT Basic Research Laboratories
-
KURIHARA Kenji
NTT Basic Research Laboratories
-
KURIHARA Kenji
NTT LSI Laboratories
-
Kurihara Kazuaki
Plasma Research Center University Of Tsukuba:(present) Japan Atomic Energy Research Institute
-
MAKINO Takahiro
NTT Basic Research Laboratories
-
Kurihara Kazuaki
Fujitsu Laboratories Inorganic Materials & Polymers Laboratory
-
Makino Takamitsu
Central Research Laboratory
-
Namatsu H
Ntt Basic Res. Lab. Kanagawa Jpn
-
Makino T
Central Research Laboratory
-
Horiguchi Seiji
Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University
関連論文
- DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
- A Field-Effect Transistor with a Deposited Graphite Thin Film
- Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
- Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
- Investigation of Edge Plasmas in the Anchor Cell Region of GAMMA 10 : Fluids, Plasmas, and Electric Discharges
- Measurement of End Loss Electrons and Ions from a Hot Ion Plasma in a Tandem Mirror
- Velocity-Space Diffusion of Wave-Heated Electrons in a Mirror Field
- Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
- A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
- Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
- Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
- Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
- Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Line-Edge Roughness: Characterization and Material Origin
- Linewidth Fluctuations Caused by Polymer Aggregates in Resist Films
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
- Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
- Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
- Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
- Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
- Threshold Voltage of Si Single-Electron Transistor
- Study of Potential Formation in an Open Magnetic Field Configuration
- Energy Analysis of ECRH-Induced End-Loss Warm Electrons in a Tandem Mirror
- Fabrication of Diamond-Like Carbon Nanosprings by Focused-Ion-Beam Chemical Vapor Deposition and Evaluation of Their Mechanical Characteristics(Micro/Nano Fabrication,Microoptomechatronics)
- Potential Distribution in the End Region of the GAMMA10 Tandem Mirror Associated with Electron Flow Control
- Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
- Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
- Suppressed Aggregate Extraction Development (SAGEX) Resists
- A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
- Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
- Critical Dimension Measurement in Nanometer Scale by Using Scanning Probe Microscopy
- An Electron Beam Nanolithography System and its Application to Si Nanofabrication
- Metrology of Atomic Force Microscopy for Si Nano-Structures
- Three-Dimensional Nanofabrication with 10-nm Resolution
- Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
- Preparation and Characterization of a Microfabricated Oxide-on-Oxide Catalyst of α-Sb_2O_4/VSbO_4
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- Selective Electrodeposition Technology for Organic Insulator Films on Microelectromechanical-System Structures
- Anti-Sticking Effect of Organic Dielectric Formed by Electrodeposition in Microelectromechanical-System Structures
- Edge-Enhancement Writing for Electron Beam Nanolithography
- Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology
- Nanometrology of Si Nanostructures Embedded in SiO_2 using Scanning Electron Microscopy
- Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
- Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode
- Phase-Breaking Effect Appearing in the Current-Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes - Theoretical Fitting Over Four Orders of Magnitude -
- Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes : Theoretical Fitting Over Four Orders of Magnitude
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
- Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
- Three-Dimensional Resist-Coating Technique and Nanopatterning on a Cube Using Electron-Beam Lithography and Etching
- Eectron-Beam Diameter Measurement Using a Knife Edge with a Visor for Scattering Eectrons
- Phonon-Limited Electron Mobility in Ultra-Thin SOI MOSFETs
- Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- A Spin-Polarized Scanning Electron Microscope with 5-nm Resolution : Instrumentation, Measurement, and Fabrication Technology
- Binary-Solvent Developer for Cross-Linked Positive-Tone Resists
- A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Removal of Gold Oxide by Low-Temperature Hydrogen Annealing for Microelectromechanical System Device Fabrication
- Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
- Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
- Evaluation of Thermal–Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy
- Height Dependence of Young's Modulus for Carbon Nanopillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
- Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
- Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
- Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy
- Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
- Electrodeposition of Water-Repellent Organic Dielectric Film as an Anti-Sticking Coating on Microelectromechanical System Devices
- Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
- Field-Effect Transistor with Deposited Graphite Thin Film
- Three-Dimensional Nanofabrication with 10-nm Resolution
- Threshold Voltage of Si Single-Electron Transistor
- Line-Edge Roughness: Characterization and Material Origin
- Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition
- The Impact of Supercritical Fluoro-Compounds on Lithography Use
- Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
- Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor
- Supercritical Improvement of Resist Patterns by Introducing Functional Molecules
- Electron-Beam Diameter Measurement Using a Knife Edge with a Visor for Scattering Electrons
- Mechanical Characteristics of Diamond-Like-Carbon Nanosprings Fabricated by Focused-Ion-Beam Chemical Vapor Deposition
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Nanometrology of Si Nanostructures Embedded in SiO2 using Scanning Electron Microscopy
- Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology