Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-06-30

著者

• ISHIDA Masahiko

  NEC Fundamental and Environmental Research Laboratories

• OCHIAI Yukinori

  NEC Fundamental and Environmental Research Laboratories

• Fujita J

  Crest-jst

• Fujita Jun-ichi

  Nec Fundamental Research Laboratories

• Hiroshima H

  National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn

• NAMATSU Hideo

  NTT Basic Research Laboratories

• KOMURO Masanori

  Advanced Semiconductor Research Center, AIST

• Ishida M

  Sii Nanotechnology Inc.

• Ishigaki Hiroyuki

  Laboratory Of Advanced Science And Technology Himeji Institute Of Technology

• Ichikawa Masakazu

  Joint Research Center For Atom Technology

• Ichikawa Masakazu

  Joint Research Center For Atom Technology Angstrom Technology Partnership

• Ichikawa Masakazu

  Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C

• Ichikawa Mitsuru

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• MATSUI Shinji

  Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology

• Manaka Susumu

  Fundamental Research Laboratories Nec Corporation

• Namatsu H

  Ntt Basic Res. Lab. Kanagawa Jpn

• Komuro M

  Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc

• IWASA Masayuki

  SII Nanotechnology Inc.

• IGAKU Yutaka

  Laboratory of Advanced Science and Technology, Himeji Institute of Technology

• HIROSHIMA Hiroshi

  Advanced Semiconductor Research Center; AIST

• Igaku Yutaka

  Laboratory Of Advanced Science And Technology Himeji Institute Of Technology

• Matsui Shinji

  Laboratory Of Advanced Science And Technology For Industry University Of Hyogo

• Matsui Shinji

  Laboratory Of Advanced Science And Technology For Industry (lasti) Graduate School Of Science Univer

• Iwasa Masayuki

  Sii Nanotechnology Inc. Tokyo Jpn

• Matsui Shinji

  Laboratory Of Advanced Science And Technolgy For Industory Himeji Institute Of Technology

関連論文

• Room Temperature Nanoimprinting Using Release-Agent Spray-Coated Hydrogen Silsesquioxane
• Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
• Diameter-Controlled Carbon Nanotubes Grown from Lithographically Defined Nanoparticles
• Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
• A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
• Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
• Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
• Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
• Nanometer-Scale Patterning of Polystyrene Resists in Low-Voltage Electron Beam Lithography
• Calixarene Electron Beam Resist for Nano-Lithography
• Resolution-Limit Study of Chain-Structure Negative Resist by Electron Beam Lithography
• Fabrication of Nanomanipulator with SiO_2/DLC Heterostructure by Focused-Ion-Beam Chemical Vapor Deposition
• Direct Extraction of Sodium Negative Ions from Sodium Plasma
• Energy Distribution of Au^- Ions Produced by Sputtering
• Dependence of Au^- Production upon the Target Work Function in a Plasma-Sputter-Type Negative Ion Source
• Sub-10-nm Electron Beam Lithography Using a Poly(α-methylstyrene) Resist with a Molecular Weight of 650
• Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication
• Line-Edge Roughness: Characterization and Material Origin
• Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
• Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
• Polycrystalline Cu(InGa)Se_2 Thin-Film Solar Cells with ZnSe Buffer Layers
• Comparison of Young's Modulus Dependency on Beam Accelerating Voltage between Electron-Beam- and Focused Ion-Beam-Induced Chemical Vapor Deposition Pillars
• Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
• Nozzle-Nanostructure Fabrication on Glass Capillary by Focused-Ion-Beam Chemical Vapor Deposition and Etching
• Three-Dimensional Nanoimprint Mold Fabrication by Focused-Ion-Beam Chemical Vapor Deposition
• Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
• A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
• Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
• Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
• Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
• Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device
• Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
• Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
• Three-Dimensional Nanofabrication with 10-nm Resolution
• Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
• Edge-Enhancement Writing for Electron Beam Nanolithography
• Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology
• Nanometrology of Si Nanostructures Embedded in SiO_2 using Scanning Electron Microscopy
• Structure and Resonant Characteristics of Amorphous Carbon Pillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
• SiO_2/c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication
• SiO_2/Poly-Si Multilayered Electron Beam Resist Process for Fabrication of Ultrasmall Tunnel Junctions
• Self-Developing Properties of an Inorganic Electron Beam Resist and Nanometer-Scale Patterning Using a Scanning Electron Beam
• Electron-Stimulated Desorption and in situ Scanning Electron Microscopy Study on Self-Developing Reaction of High-Resolution Inorganic Electron Beam Resist
• Nanometer-Scale Direct Carbon Mask Fabrication Usirng Electron-Beam-Assisted Deposition
• Layer-by-Layer Oxidation of Si(001) Surfaces
• High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
• A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
• Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
• High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces
• Diffusion Constants of Si Adsorbates on a Si(001) Surface
• Observation of Si(001) Surface Domains in Absorption Current Images of an Electron Microscope
• Observation of 1-nm-High Structures on a Si (001) Surface Using a Differential Interference Optical Microscope
• Three-Dimensional Resist-Coating Technique and Nanopatterning on a Cube Using Electron-Beam Lithography and Etching
• Eectron-Beam Diameter Measurement Using a Knife Edge with a Visor for Scattering Eectrons
• Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)
• Fabrication of Low Line Edge Roughness Mold by Spin On Glass (SOG) Replica Method
• Fabrication of Low Line Edge Roughness Mold for Photo-Nanoimprint
• Reflective Double Slit Atom Interferometer
• Reflective Double Slit Atom Interferometer
• Focused Ga Ion Beam Etching of Si in Chlorine Gas : Etching and Deposition Technology
• Focused Ga Ion Beam Etching of Si in Chlorine Gas
• Evaluation of UV-nanoimprinted surface roughness using Si mold with atomically flat terraces
• Measurement of Adhesive Force Between Mold and Photocurable Resin in Imprint Technology
• Line Width Reproducibility of Photo-Nanoimprints
• Reducing Photocurable Polymer Pattern Shrinkage and Roughness during Dry Etching in Photo-Nanoimprint Lithography
• Step-and-Repeat Photo-Nanoimprint System Using Active Orientation Head
• Evaluation of Line Edge Roughness in Nanoimprint Lithography Using Photocurable Polymer
• Elimination of Pattern Defects of Nanoimprint under Atmospheric Conditions
• Improvement of Imprinted Pattern Uniformity Using Sapphire Mold
• Uniformity in Patterns Imprinted Using Photo-Curable Liquid Polymer
• Imprint Characteristics by Photo-Induced Solidification of Liquid Polymer
• Preparation of Diamond Mold Using Electron Beam Lithography for Application to Nanoimprint Lithography
• Electron Beam Assisted Chemical Etching of Single-Crystal Diamond Substrates with Hydrogen Gas
• A Spin-Polarized Scanning Electron Microscope with 5-nm Resolution : Instrumentation, Measurement, and Fabrication Technology
• Investigating Line-Edge Roughness in Calixarene Fine Patterns Using Fourier Analysis
• Binary-Solvent Developer for Cross-Linked Positive-Tone Resists
• A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
• Giant Quantum Reflection of Neon Atoms from a Ridged Silicon Surface
• Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
• Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
• A Proposal of a Hybrid Magnetic Probe
• Nanolithography Using a Chemically Amplified Negative Resist by Electron Beam Exposure
• Characteristics of SiO_2 as a High-Resolution Electron Beam Resist
• Nozzle-Nanostructure Fabrication on Glass Capillary by Focused-Ion-Beam Chemical Vapor Deposition and Etching
• Diameter-Controlled Carbon Nanotubes Grown from Lithographically Defined Nanoparticles
• Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
• Three-Dimensional Nanoimprint Mold Fabrication by Focused-Ion-Beam Chemical Vapor Deposition
• Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
• Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
• Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
• Three-Dimensional Nanofabrication with 10-nm Resolution
• Line-Edge Roughness: Characterization and Material Origin
• The Impact of Supercritical Fluoro-Compounds on Lithography Use
• Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor
• Supercritical Improvement of Resist Patterns by Introducing Functional Molecules
• Electron-Beam Diameter Measurement Using a Knife Edge with a Visor for Scattering Electrons
• Mechanical Characteristics of Diamond-Like-Carbon Nanosprings Fabricated by Focused-Ion-Beam Chemical Vapor Deposition
• Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
• Nanometrology of Si Nanostructures Embedded in SiO2 using Scanning Electron Microscopy
• Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology

もっと見る 閉じる

スポンサーリンク