Nanolithography Using a Chemically Amplified Negative Resist by Electron Beam Exposure
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概要
- 論文の詳細を見る
We study the resolution limit for dot patterns using a chemically amplified negative resist by the nanometer electron beam lithography system. It is confirmed that the substrates baked at 27O℃ after HMDS coating are suitable for fine resist dot patterning. In addition, the post exposure bake (PEB) dependencies of sensitivity and resolution are investigated. As a result, 20-nm-diameter dot resist patterns with a 30 nm height, and 35-nm-diameter dot resist patterns with a 50 nm height are fabricated on Si substrates.
- 社団法人応用物理学会の論文
- 1994-12-30
著者
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Fujita J
Crest-jst
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MANAKO Shoko
Fundamental Res. Labs., NEC Corporation
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FUJITA Jun-ichi
Fundamental Res. Labs., NEC Corporation
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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Manaka Susumu
Fundamental Research Laboratories Nec Corporation
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SAMOTO Norihiko
Kansai Electronics Research Laboratories, NEC Corporation
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Samoto Norihiko
Kansai Electronics Research Laboratories Nec Corporation
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