GaAs Dry Etching Using Electron Beam Induced Surface Reaction

概要

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GaAs dry etching using a showered electron beam (EB) through Cl_2 gas has been studied. The etching rate of EB-assisted etching is twice that of Cl_2 gas etching, and the etching yield is estimated to be 130 atoms / electron. A GaAs pattern with a 0.3 μm linewidth has been obtained by using a resist mask. It was confirmed through measuring photoluminescence that the damage induced by EB-assisted etching is nearly the same as that caused by gas etching, and less than the damage induced by reactive ion beam etching or ion beam etching. A reverse dry etching technique is demonstrated whereby a surface layer of carbon formed on the substrate resulting from EB irradiation is used as a mask for EB-assisted etching. High-selectivity is obtained between the carbon mask and GaAs. Using this technique, a 0.6 μm linewidth reverse pattern is transferred.
社団法人応用物理学会の論文
1991-11-30