Focused Ion Beam Lithography Using Novolak-Based Resist : Techniques, Instrumentations and Measurement
スポンサーリンク
概要
- 論文の詳細を見る
A lithographic process using a novolak-based resist has been developed for the focused ion beam. It became clear that both positive and negative resist patterns can be easily achieved by choosing appropriate ion doses. The positive resist pattern with 0.4 μm linewidth could be fabricated by 260 keV Be^<++> FIB at a 4.0×10^<12> ions / cm^2 dose. Moreover, the negative resist pattern with 0.3 μm linewidth could be achieved by 260 keV Be^<++> FIB at a 3.0×10^<13> ions / cm^2 dose. The negative resist patterns with vertical side walls demonstrated that the image reversal method, developed here, is very useful for device fabrication processes, such as a submicron gate formation.
- 社団法人応用物理学会の論文
- 1988-09-20
著者
-
OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
-
MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
-
Manaka Susumu
Fundamental Research Laboratories Nec Corporation
-
Matsui S
Graduate School Of Science Laboratory Of Advanced Science And Technology For Industry (lasti) Univer
-
Kojima Y
Nagoya Univ. Nagoya Jpn
-
Kojima Yoshikatsu
Fundamental Research Labs. Nec Corporation
関連論文
- Room Temperature Nanoimprinting Using Release-Agent Spray-Coated Hydrogen Silsesquioxane
- Nanometer-Scale Patterning of Polystyrene Resists in Low-Voltage Electron Beam Lithography
- Calixarene Electron Beam Resist for Nano-Lithography
- Resolution-Limit Study of Chain-Structure Negative Resist by Electron Beam Lithography
- Fluorine Gas Field Ion Source : Beam Induced Physics and Chemistry
- Fabrication of Nanomanipulator with SiO_2/DLC Heterostructure by Focused-Ion-Beam Chemical Vapor Deposition
- Brilliant Blue Observation from a Morpho-Butterfly-Scale Quasi-Structure
- Sub-10-nm Electron Beam Lithography Using a Poly(α-methylstyrene) Resist with a Molecular Weight of 650
- Photoluminescence Studies and Solar-Cell Application of CuInSe_2 Thin Films Prepared using Selenization Techniques
- FIB Exposure Characteristics of LB Film
- Effect of UV Irradiation on Microlens Arrays Fabricated by Room Temperature Nanoimprinting Using Organic Spin-on-Glass
- In-situ Observation of the Three-Dimensional Nano-Structure Growth on Focused-Ion-Beam Chemical Vapor Deposition by Scanning Electron Microscope
- Evaluation of Vacuum Microcapsule Fabricated using Focused-Ion-Beam Chemical-Vapor-Deposition
- Fabrication of Diamond-Like Carbon Nanosprings by Focused-Ion-Beam Chemical Vapor Deposition and Evaluation of Their Mechanical Characteristics(Micro/Nano Fabrication,Microoptomechatronics)
- Comparison of Young's Modulus Dependency on Beam Accelerating Voltage between Electron-Beam- and Focused Ion-Beam-Induced Chemical Vapor Deposition Pillars
- Characterization of Hard Diamond-Like Carbon Films Formed by Ar Gas Cluster Ion Beam-Assisted Fullerene Deposition
- Fabrication and Magnetotransport of One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Ion Irradiation
- Resolution of 1:1 Electron Stepper with Patterned Cold Cathode
- Evaluation of Field Electron Emitter Fabricated Using Focused-Ion-Beam Chemical Vapor Deposition
- Structure and Resonant Characteristics of Amorphous Carbon Pillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
- Direct Etching of Spin-on-Glass Films Exposed Using Synchrotron Radiation
- Self-Developing Properties of an Inorganic Electron Beam Resist and Nanometer-Scale Patterning Using a Scanning Electron Beam
- Electron-Stimulated Desorption and in situ Scanning Electron Microscopy Study on Self-Developing Reaction of High-Resolution Inorganic Electron Beam Resist
- Nanometer-Scale Direct Carbon Mask Fabrication Usirng Electron-Beam-Assisted Deposition
- Optical Thin Film Formation with O_2 Cluster Ion Assisted Deposition
- Ultra-Smooth Surface Preparation Using Gas Cluster Ion Beams
- Photoelectron spectroscopy study of the valence band region in diamond-like carbon thin films
- Excitation Energy Dependence for the Li 1s X-ray Photoelectron Spectra of LiMn_2O_4
- Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)
- Measurement of Sidewall Roughness by Scanning Tunneling Microscope : Inspection and Testing
- Measurement of Sidewall Roughness by Scanning Tunneling Microscope
- 0.25 μm Electron Beam Direct Writing Techniques for 256 Mbit Dynamic Random Access Memory Fabrication
- Carbon-Nanotube Field-Effect Transistors with Very High Intrinsic Transconductance
- Imprint Characteristics by Photo-Induced Solidification of Liquid Polymer
- Sub-10-nm-Scale Lithography Using p-chloromethyl-methoxy-calix[4]arene Resist
- Reverse Dry Etching Using a High-Selectivity Carbon Mask Formed by Electron Beam Deposition
- GaAs Dry Etching Using Electron Beam Induced Surface Reaction
- High-Quality GaAs/AlAs Buried Heterostructures Grown by Molecular Beam Epitaxy on Patterned Substrates
- Focused-Ion-Beam Surface Modification for Selective Growth of InP Wires on GaAs
- Cl Atom Desorption by Chemical Reaction with Al Atom on Si(111) 7 × 7 Studied by Scanning Tunneling Microscopy
- Nanostructure Fabrication by Scanning Tunneling Microscope : Microfabrication and Physics
- Nanostructure Fabrication by Scanning Tunneling Microscope
- Superconducting Lines Fabricated from Epitaxial Y-Ba-Cu-O Films : High Temperature Superconducting Thin-Films(Solid State Devices and Materials 1)
- YBa_2Cu_3O_y Superconducting Thin Film Obtained by Laser Annealing : Electrical Properties of Condensed Matter
- Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation
- 0.15 μm Electron Beam Direct Writing for Gbit Dynamic Random Access Memory Fabrication
- An Approach for Nanolithography Using Electron Holography
- Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
- Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
- Improved Registration Accuracy in E-Beam Direct Writing Lithography
- Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System : Micro/nanofabrication and Devices
- Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System
- Composition and Growth Mechanisms of a Boron Layer Formed Using the Molecular Layer Doping Process
- Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching
- Nanolithography Using a Chemically Amplified Negative Resist by Electron Beam Exposure
- Focused Ion Beam Lithography Using Novolak-Based Resist : Techniques, Instrumentations and Measurement
- Fabrication of Y-Cu Liquid Metal Ion Sources : Techniques, Instrumentations and Measurement
- Etching Characteristics for Organosilica
- Low-Temperature Electron-Beam-Assisted Dry Etching for GaAs Using Electron-Stimulated Desorption
- Electron Beam Irradiation Effects on Cl_2/GaAs
- GaAs Dry Etching Using Electron Beam Induced Surface Reaction : Etching
- New Selective Deposition Technology by Electron Beam Induced Surface Reaction
- Carbon-Nanotube Field-Effect Transistors with Very High Intrinsic Transconductance
- Improvement of neuronal cell adhesiveness on parylene with oxygen plasma treatment(CELL AND TISSUE ENGINEERING)
- Sub-10-nm-Scale Lithography Using $p$-chloromethyl-methoxy-calix[4]arene Resist