Improved Registration Accuracy in E-Beam Direct Writing Lithography

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概要

• 論文の詳細を見る

• This paper reports on techniques for improving registration accuracy in electron beam (EB) direct writing lithography for a 0.25 μm process. An analysis of registration accuracy for the EB writing system was performed with the goal of minimizing registration errors, since mark detection and stage positioning accuracies are not sufficient for a 0.25 μm process. To improve mark detection accuracy, a new technique based on the correlation parameter optimization method was developed, and the stage guide mechanism was reinforced to improve stage positioning accuracy. Using these two techniques, the calculated registration accuracy was improved to 0.070 μm (|x^^-|+3σ). EB direct writing incorporating the above was applied to the development of a 256 M bit DRAM, having a minimum feature size of 0.25 μm. A sufficient registration accuracy of 0.075 μm (|x^^-|+3σ) was obtained for the EB writing layer.

• 社団法人応用物理学会の論文
• 1993-12-30

著者

• NAKAJIMA Ken

  ULSI Device Development Labs, NEC Corporation

• Mukai H

  Hokkaido Univ. Hokkaido Jpn

• Mukai Hiroshi

  Nec Factory Engineering Corporation

• KOJIMA Yoshikatsu

  ULSI Device Development Laboratories, NEC Corporation

• AIZAKI Naoaki

  ULSI Device Development Laboratories, NEC Corporation

• Aizaki N

  Ulsi Device Development Labs. Nec Corporation

• Kojima Y

  Nagoya Univ. Nagoya Jpn

• Kojima Yoshikatsu

  ULSI Device Development Laboratories, NEC Corp.

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