Electron Beam Irradiation Effects on Cl_2/GaAs
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概要
- 論文の詳細を見る
A chlorine-gas-etched (100) GaAs surface is studied using in-situ X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The Ga 2p3/2 core level shifts to a higher binding energy, which indicates the preferential formation of Ga-Cl bonds. An As-rich surface is also observed for the gas-etched GaAs. Removal of the chlorine-adsorbed Gaps surface, due to the electron-stimulated desorption (ESD) effect, occurs and is evaluated by measuring both the change of the chlorine signal in AES spectra and the chemical shift in XPS spectra. These observations suggest the existence of two types of ESD processes, each with a different cross section to electron beam irradiation. The results are explained in relation to a theoretically predicted chlorine gas etching model.
- 社団法人応用物理学会の論文
- 1993-12-30
著者
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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Watanabe Heiji
Fundamental Research Laboratories Nec Corporation
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Matsui Shinji
Fundamental Research Laboratories Nec Corporation
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