Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System
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概要
- 論文の詳細を見る
A high energy 50-kV electron beam direct writing system which has a gas introduction line has been developed. Several aspects of the performance of this system are demonstrated. The electron beam size has been improved to be less than 5 nm. 10-nm width line patterns with 50-nm periods in PMMA resist on a thick Si substrate are demonstrated. It is observed that fewer proximity effects occur when a high-energy electron beam is used. 20-nm-width lines and 20-nm-diameter Au-Pd metal patterns have been fabricated by a lift-off method. 14-nm-diameter carbon dot patterns were deposited on a Si substrate by electron-beam-induced deposition using Styrene gas.
- 社団法人応用物理学会の論文
- 1991-11-30
著者
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Baba M
Institute For Solid State Physics University Of Tokyo
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Manaka Susumu
Fundamental Research Laboratories Nec Corporation
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Baba Masakazu
Fundamental Research Laboratories Nec Corporation
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Baba Masakazu
Ntt Information And Communication Systems Laboratories
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Watanabe Heiji
Fundamental Research Laboratories Nec Corporation
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