High-Quality GaAs/AlAs Buried Heterostructures Grown by Molecular Beam Epitaxy on Patterned Substrates
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概要
- 論文の詳細を見る
GaAs wires completely embedded in AlAs are successfully grown by molecular beam epitaxy at substrate temperatures higher than 725℃ without interrupting growth. Crescent-shaped 1800-Å-wide GaAs wires are embedded in AlAs using this technique and electron beam lithography. We also investigate the dependence of photoluminescence on the GaAs wire width at room temperature. This investigation indicates that the emission efficiency of the narrowest GaAs wires (1800 Å wide) is at least as high as that of a quantum well grown on a planar substrate.
- 社団法人応用物理学会の論文
- 1993-08-01
著者
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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Anan Masami
Optoelectronics Research Laboratories Nec Corporation
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Sugimoto Mitsunori
Optoelectronics Research Laboratories Nec Corporation
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SAITO Hideaki
Optoelectronics Research Laboratories, NEC Corporation
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Saito Hideaki
Optoelectronics Research Laboratories Nec Corporation
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OCHIAI Yukinori
Fundamental Research Laboratories, NEC Corporation
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Saito Hideaki
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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