Indium Composition Dependent Threshold Current Density in Strained InGaAs/AlGaAs Quantum Well Lasers

概要

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The dependence of threshold current density on indium composition in strained InGaAs/AlGaAs quantum well lasers is examined. A threshold current density (J_<th>) as low as 115 A/cm^2 is obtained in a chip with a 500 μm long cavity at a lasing wavelength of 950 nm. The J_<th> for a strained InGaAs QW was found to be 35% less than that for a GaAs QW laser with the same cavity length. Time resolved photoluminescence measurement revealed that the improvement in the nonradiative carrier lifetime for quantum wells with higher indium composition was limited to a J_<th> improvement of only 10%. Calculation suggests that the most likely reason for the major portion of the J_<th> improvement is gain enhancement due to a reduction in heavy hole mass.
社団法人応用物理学会の論文
1991-12-15