Conduction-Band Discontinuity of InAsP/InP Heterojunction
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概要
- 論文の詳細を見る
The band line-up of InAsP/InP heterojunctions was investigated. The conduction-band discontinuity ratio 〓_c of strained InAsP alloys was determined by fitting the well thickness dependence of transition energies in InAsP quantum walls. This method does not require precise values of deformation potentials of InAsP, allowing more reliable determination of the band offset. The obtained 〓_c value was 0.35, which is relatively small compared to previous reports. This value of the band offset is consistent with the predictions from the semi-empirical linear combination of atomic orbitals (LCAO) model.
- 社団法人応用物理学会の論文
- 1998-07-15
著者
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SUGOU Shigeo
Single Quantum Dot Project
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NISHI Kenichi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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SUGOU Shigeo
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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Nishi K
Single Quantum Dot Project Erato Jst Tsukuba Research Consortium:system Devices And Fundamental Rese
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Nishi Kenichi
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Tomita A
Nec Ibaraki Jpn
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Tomita Akihisa
Quantum Computation And Information Project Erato Japan Science And Technology Corporation:fundament
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ANAN Takayoshi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corp.
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TOKUTOME Keiichi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corp.
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TOMITA Akihisa
Optoelectronics and High Frequency Device Research Laboratories, NEC Corp.
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Tomita Akihisa
Optoelectronics And High Frequency Device Research Laboratories Nec Corp.
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Anan T
Optoelectronics And High Frequency Device Research Laboratories Nec Corp.
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Tokutome Keiichi
Optoelectronics And High Frequency Device Research Laboratories Nec Corp.
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Sugou Shigeo
Optoelectronics and High Frequency Device Research Laboratories, NEC Corp.
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