Selective Growth of InGaAs/InP Layers by Gas Source Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
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概要
- 論文の詳細を見る
Selective gas source molecular beam epitaxy (gas source MBE) growth of high-quality InGaAs/InP layers on mask-patterned InP substrates is demonstrated for the first time with atomic hydrogen irradiation. A decrease in polycrystalline density of over 3 orders of magnitude is achieved for InP selective growth by atomic hydrogen irradiation. The selective growth of high-quality InGaAs/InP multiple quantum-well (MQW) structures is also demonstrated. Photoluminescence (PL) spectroscopy indicates that the peak-wavelength of she MQW structure does not depend on the mask stripe width, but significant peak-wavelength dependence on the stripe spacing width was observed.
- 社団法人応用物理学会の論文
- 1993-11-01
著者
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Kuroda Naotaka
Nec Corp. Opto-electronics Research Laboratories
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SUGOU Shigeo
Single Quantum Dot Project
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Sugou Shigeo
Nec Corp. Opto-electronics Research Laboratories
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SASAKI Tatsuya
NEC Corp., Opto-electronics Research Laboratories
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KITAMURA Mitsuhiro
NEC Corp., Opto-electronics Research Laboratories
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Kitamura Mitsuhiro
Nec Corp. Opto-electronics Research Laboratories
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Sasaki Tatsuya
Nec Corp. Opto-electronics Research Laboratories
関連論文
- Breakdown of the Phonon Bottleneck Effect in Self-Assembled Quantum Dots
- Lateral Composition Modulation Induced Optical Anisotropy in InP/GaInP Quantum Dot System
- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
- Observation of Franz-Keldysh Oscillations in InP Self-Assembled Quantum Dot Systems
- Highly Uniform and Small InP/GaInP Self-Assembled Quantum Dots Grown by Metal-Organic Vapor Phase Epitaxy
- Lateral Composition Modulation Induced Structural Anisotropy in InP/GaInP Quantum Dot System
- Size Quantization in InAs/GaAs Self-Assembled Quantum Dots Grown by Gas-Source Molecular Beam Epitaxy
- Size Quantization in InAs/GaAs Self-Assembled Quantum Dots by Gas-Source Molecular Beam Epitaxy
- Control of InAs Self-Assembled Islands on GaAs Vicinal Surfaces by Annealing in Gas-Source Molecular Beam Epitaxy ( Quantum Dot Structures)
- Real-Time Observation of Ellipsometry Oscillation during GaAs Layer by Layer Growth by Metalorganic Vapor-Phase Epitaxy
- Selective Growth of InGaAs/InP Layers by Gas Source Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- Band Line-up of InAsP/InAlGaAs Quantum Well
- Conduction-Band Discontinuity of InAsP/InP Heterojunction
- Breakdown of the Phonon Bottleneck Effect in Self-Assembled Quantum Dots
- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks