Band Line-up of InAsP/InAlGaAs Quantum Well
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概要
- 論文の詳細を見る
A band line-up of InAs_<0.45>P_<0.55>/In_<0.53> (Al_xGa_<1-x>)_<0.47>As heterojunction was investigated. Type-I and type-II band line-ups were obtained according to the Al relative composition x of InAlGaAs. This band line-up variation can be explained by assuming the conduction band discontinuity of InAsP/InP to be 0.35. A large conduction band discontinuity with type-I band line-up can be obtained with an Al relative composition x larger than 0.6 in this material system, which is promising for the multi-quantum well structure of 1.3-μm lasers with good temperature performance.
- 社団法人応用物理学会の論文
- 1999-12-15
著者
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SUGOU Shigeo
Single Quantum Dot Project
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NISHI Kenichi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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SUGOU Shigeo
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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Nishi K
Single Quantum Dot Project Erato Jst Tsukuba Research Consortium:system Devices And Fundamental Rese
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Nishi Kenichi
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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ANAN Takayoshi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corp.
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TOKUTOME Keiichi
Optoelectronics and High Frequency Device Research Laboratories, NEC Corp.
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Anan T
Optoelectronics And High Frequency Device Research Laboratories Nec Corp.
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Tokutome Keiichi
Optoelectronics And High Frequency Device Research Laboratories Nec Corp.
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Sugou Shigeo
Optoelectronics and High Frequency Device Research Laboratories, NEC Corp.
関連論文
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- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
- Observation of Franz-Keldysh Oscillations in InP Self-Assembled Quantum Dot Systems
- Highly Uniform and Small InP/GaInP Self-Assembled Quantum Dots Grown by Metal-Organic Vapor Phase Epitaxy
- Lateral Composition Modulation Induced Structural Anisotropy in InP/GaInP Quantum Dot System
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- Size Quantization in InAs/GaAs Self-Assembled Quantum Dots by Gas-Source Molecular Beam Epitaxy
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- Real-Time Observation of Ellipsometry Oscillation during GaAs Layer by Layer Growth by Metalorganic Vapor-Phase Epitaxy
- Selective Growth of InGaAs/InP Layers by Gas Source Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate Orientations
- Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy
- Band Line-up of InAsP/InAlGaAs Quantum Well
- Conduction-Band Discontinuity of InAsP/InP Heterojunction
- Effects of Spectral Broadening and Cross Relaxation on the Gain Saturation Characteristics of Quantum Dot Laser Amplifiers
- Low Temperature Near-Field Photoluminescence Spectroscopy of InGaAs Single Quantum Dots
- Indium Composition Dependent Threshold Current Density in Strained InGaAs/AlGaAs Quantum Well Lasers
- Breakdown of the Phonon Bottleneck Effect in Self-Assembled Quantum Dots
- Effects of Spectral Broadening and Cross Relaxation on the Gain Saturation Characteristics of Quantum Dot Laser Amplifiers
- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks