Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
A novel method utilizing the island formation in hydride vapor phase epitaxy (VPE) is used to fabricate structures in which nanoscale InP islands are buried in InGaP. The method allows the structures to be grown without using photolithography or etching steps. An intense, island-related photoluminescence is observed from the structures. The emission is blue shifted from the InP bulk emission wavelength and shows dependence on the island size. The island formation dependence on growth conditions is investigated in the attempt to be able to control the size and the density of the islands.
- 社団法人応用物理学会の論文
- 1993-01-15
著者
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Yamaguchi A
System Devices And Fundamental Research Nec Corporation
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SAKAKI Hiroyuki
Quantum Wave Project, JRDC
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Usui A
Nec Corp. Ibaraki Jpn
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Usui Akira
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Usui A
Aist Ibaraki
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Nishi K
Single Quantum Dot Project Erato Jst Tsukuba Research Consortium:system Devices And Fundamental Rese
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AHOPELTO Jouni
Quantum Wave Project, ERATO, Research Development Corporation of Japan (JRDC)
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YAMAGUCHI A.
Quantum Wave Project, ERATO, Research Development Corporation of Japan (JRDC)
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NISHI Kenichi
Quantum Wave Project, ERATO, Research Development Corporation of Japan (JRDC)
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USUI Akira
Quantum Wave Project, ERATO, Research Development Corporation of Japan (JRDC)
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Usui Akira
Quantum Wave Project Erato Reseach Development Corporation Of Japan (jrdc)
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Ahopelto Jouni
Quantum Wave Project Erato Research Development Corporation Of Japan (jrdc)
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Sakaki Hiroyuki
Quantum Wave Project Erato Research Development Corporation Of Japan (jrdc)
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